Bio
Monzurul Alam received the Ph.D. degree in Electrical and Computer Engineering from Purdue University in 2021, the M.E. degree in Electrical Engineering from Tennessee State University in 2014, and the B.Sc. degree in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology in 2006. He illustrated the practical limit and the design guideline of a superjunction device in 4H-SiC through an analytical model backed by TCAD simulation. He also demonstrated the functionality of a novel n-channel IGBT device called waffle-substrate based IGBT in 4H-SiC through design, fabrication, and characterization at Birck Nanotechnology Center of Purdue University.
Research Interests
Application of wide bandgap materials like 4H-SiC, GaN, TCAD simulation, fabrication, and characterization of power semiconductor devices, RF devices, CMOS/BiCMOS integrated circuits.
Recent Publications
- Monzurul Alam, Noah Opondo, Dallas Morisette, James Cooper (2022). (Demonstration of a 10-kV Class Waffle-Substrate n-Channel IGBT in 4H-SiC). (10) 69, pp. 5683 - 5688. IEEE Transactions on Electron Devices.
- Monzurul Alam, Dallas Morisette, James Cooper (2018). (Design guidelines for superjunction devices in the presence of charge imbalance). (8) 65, pp. 3345-3351. IEEE Transactions on Electron Devices.
- Kerrie Douglas, Peter Bermel, Monzurul Alam, Krishna Madhavan (2016). (Big data characterization of learner behaviour in a highly technical MOOC engineering course). (3) 3, pp. 170-192. Journal of Learning Analytics.
